Silicon Carbide wafer by Vritra Technologies

2, 3, 4,and 6 Inch 4H/6H Silicon Carbide SiC Wafer Substrate


Silicon carbide (SiC) Wafer Possesses special physical and electronic properties. Devices that are based on Silicon Carbide are used in applications that deal with High Temperature, short wavelength opto-electronic, and radiation resistance. SIC wafer have a clear advantage over Si and GaAs when it comes to the high-power and high-frequency electronic devices. These are some of the applications of SiC substrates.

  • It is used as a substrate for the fabrication of blue Color LEDs and nearly solar blind UV photo detectors.
  • semiconductor that are based on SIC can function normally even under hostile environment such as high power, high temperature and high radiation.
  • Fabrication of very high-voltage and high-power devices like diodes, power transistors, and high power microwave devices.
FEATURE SiC-based power devices Conventional Si-devices
Faster switching speed X
Higher voltage X
Lower Parasitic Resistances X
Less cooling required X
Properties of Silicon Carbide (SIC)
Name 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Density 3.21 g/cm3 3.21 g/cm3
Dielectric Constant c~9.66 c~9.66
Band-gap 3.23 eV 3.02 eV
Break-Down Electrical Field 3-5×106V/cm 3-5×106V/cm
Saturation Drift Velocity 2.0×105m/s 2.0×105m/s
Specifications of Silicon Carbide (SIC) wafer
Property 4H / 6H
Diameter 2 , 3, 4, 6 Inches
Thickness 330 um ~-350 um or as required
Wafer Orientation On axis <0001> ± 0.5° for 6H-N/4H-N/4H-SI/6H-SI --Off axis 4° towards <1120> ± 0.5° for 4H-N/4H-SI
Conductivity N - type / Semi-insulating (SI)
Resistivity ( 4H-N ) 0.015 ~ 0.028 ohm cm
Resistivity ( 6H-N ) 0.02 ~ 0.1 ohm cm
Resistivity ( SI ) > 1E5 ohm cm
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