Silicon carbide (SiC) Wafer Possesses special physical and electronic properties. Devices that are based on Silicon Carbide are used in applications that deal with High Temperature, short wavelength opto-electronic, and radiation resistance. SIC wafer have a clear advantage over Si and GaAs when it comes to the high-power and high-frequency electronic devices. These are some of the applications of SiC substrates.
- It is used as a substrate for the fabrication of blue Color LEDs and nearly solar blind UV photo detectors.
- semiconductor that are based on SIC can function normally even under hostile environment such as high power, high temperature and high radiation.
- Fabrication of very high-voltage and high-power devices like diodes, power transistors, and high power microwave devices.
| FEATURE | SiC-based power devices | Conventional Si-devices |
|---|---|---|
| Faster switching speed | ✓ | X |
| Higher voltage | ✓ | X |
| Lower Parasitic Resistances | ✓ | X |
| Less cooling required | ✓ | X |
Properties of Silicon Carbide (SIC)
| Name | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
|---|---|---|
| Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Density | 3.21 g/cm3 | 3.21 g/cm3 |
| Dielectric Constant | c~9.66 | c~9.66 |
| Band-gap | 3.23 eV | 3.02 eV |
| Break-Down Electrical Field | 3-5×106V/cm | 3-5×106V/cm |
| Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
Specifications of Silicon Carbide (SIC) wafer
| Property | 4H / 6H |
|---|---|
| Diameter | 2 , 3, 4, 6 Inches |
| Thickness | 330 um ~-350 um or as required |
| Wafer Orientation | On axis <0001> ± 0.5° for 6H-N/4H-N/4H-SI/6H-SI --Off axis 4° towards <1120> ± 0.5° for 4H-N/4H-SI |
| Conductivity | N - type / Semi-insulating (SI) |
| Resistivity ( 4H-N ) | 0.015 ~ 0.028 ohm cm |
| Resistivity ( 6H-N ) | 0.02 ~ 0.1 ohm cm |
| Resistivity ( SI ) | > 1E5 ohm cm |