Description
Substrate: monocrystalline silicon
SiO2 Coating Thickness: 300 nm
Dimensions: 4 mm x 7 mm
Line width: 20 μm
Line Width: 20 μm
Finger length:1.5 mm
Number of Fingers: 30 Pairs (60 Fingers)
Metal layer structure: Cr (30 nm)/Au (100 nm)
Temperature range for electrode use: -150° C – 500° C
